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| Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 6, 5/2006 UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems. * Typical W - CDMA Performance for VDD = 28 Volts, Vbias = 8 Volts, IDQ = 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels at 5 MHz, ACPR Measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF, 3GPP Test Model 1, 64 DTCH. * Adjacent Channel Power: - 50 dBc @ 30 dBm, 5 MHz Channel Spacing * Power Gain: 23.7 dB Min (@ f = 2140 MHz) * 0.2 dB Typical Gain Flatness Features * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * N Suffix Indicates Lead - Free Terminations MHPA21010N 2110 - 2170 MHz 10 W, 23.7 dB RF HIGH POWER LDMOS AMPLIFIER CASE 301AP - 02, STYLE 3 Table 1. Maximum Ratings (TC = 25C unless otherwise noted) Rating DC Supply Voltage RF Input Power (Single Carrier CW) Storage Temperature Range Operating Case Temperature Range Quiescent Bias Current Symbol VDD Pin Tstg TC IDQ Value 30 +20 - 40 to +100 - 20 to +100 750 Unit Vdc dBm C C mA Table 2. Electrical Characteristics (VDD = 28 Vdc, VBIAS 8 V Set for Supply Current of 550 mA, TC = 25C, 50 System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Noise Figure (f = 2140 MHz) (f = 2110 - 2170 MHz) (f = 2140 MHz) (f = 2110 - 2170 MHz) (f = 2140 MHz) Symbol IDD Gp GF P1dB VSWRin NF ACPR Min -- 23.7 -- -- -- -- -- Typ 550 25 0.2 41.5 1.5:1 -- - 55 Max -- -- 0.6 -- 2:1 10 - 50 dB dBc Unit mA dB dB dBm Adjacent Channel Power Rejection @ 30 dBm Avg., 3.84 MHz BW, 5 MHz Channel Spacing (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MHPA21010N 1 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS IRL/ORL, INPUT/OUTPUT RETURN LOSS (dB) 20 15 10 5 0 -5 -10 -15 -20 2080 2100 2120 2140 2160 2180 VDD = 28 Vdc Pout = 5 W IDQ = 550 mA 10 MHz Tone Spacing Gps 28 27 26 25 24 ORL 23 22 21 20 2200 30 28 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 26 24 22 20 18 25_C 16 2100 2110 2120 2130 2140 2150 2160 2170 2 2180 VDD = 28 Vdc Pout = 1 W (Avg.) IDQ = 550 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing BW = 3.84 MHz Carrier Bandwidth Gps 16 TC = -10_C 14 , DRAIN EFFICIENCY (%) 40 G ps , POWER GAIN (dB) 25_C 12 85_C 10 8 85_C -10_C 6 4 IRL f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 1. Two - Tone Power Gain, Input Return Loss and Output Return Loss versus Frequency IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) Figure 2. 2 - Carrier W - CDMA Power Gain and Efficiency versus Frequency IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -30 IM3 VDD = 28 Vdc Pout (Pin) = 1 W (Avg.) IDQ = 550 mA -10 TC = 85_C -20 -10_C -20 -25 -30 -35 -40 -45 -50 -55 10 MHz -60 15 20 25 30 35 Pout, OUTPUT POWER (WATTS) PEP 100 kHz VDD = 28 Vdc, IDQ = 550 mA 100 kHz: f1 = 2139.95 MHz f2 = 2140.05 MHz 10 MHz: f1 = 2135 MHz f2 = 2145 MHz -35 -40 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Carrier Bandwidth -45 ACPR @ 5 MHz, IM3 @ 10 MHz, Bandwidth = 3.84 MHz -50 ACPR -55 2100 25_C 2120 2130 2140 2150 2160 2170 25_C 85_C -30 -40 -10_C -50 -60 2180 2110 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA IM3 and ACPR versus Frequency IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), Pout , OUTPUT POWER (dBm) Figure 4. Two - Tone W - CDMA IM3 versus Output Power -20 -25 -30 -35 -40 -45 -50 -55 450 mA -60 15 20 25 30 550 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 35 40 IDQ = 750 mA 650 mA 48 40 32 24 16 8 0 -5 Gps 26 25 24 Pout 23 22 VDD = 28 Vdc IDQ = 550 mA f = 2140 MHz 0 5 10 15 20 25 21 20 Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) PEP Figure 5. Third Order Intermodulation Distortion versus Output Power MHPA21010N 2 Figure 6. CW Output Power, Efficiency and Gain versus Input Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS -40 VDD = 28 Vdc IDQ = 550 mA f1 = 2135 MHz f2 = 2145 MHz 10 -45 IM3 (dBc), ACPR (dBc) 8 , DRAIN EFFICIENCY (%) -50 IM3 ACPR -60 -65 5 10 15 20 25 30 6 -55 4 2 0 35 Pout, OUTPUT POWER (dBm) Figure 7. 2 - Carrier W - CDMA ACPR, IM3 and Efficiency versus Output Power MHPA21010N RF Device Data Freescale Semiconductor 3 NOTES MHPA21010N 4 RF Device Data Freescale Semiconductor NOTES MHPA21010N RF Device Data Freescale Semiconductor 5 NOTES MHPA21010N 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A G 0.020 (0.51) M A S 2X Q 0.008 (0.20) M TS M A M TA M B R J K W 4X 1 2 3 4 S NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC D M N L H F E C T SEATING PLANE M 0.020 (0.51) M TB 4X P 0.020 (0.51) T DIM A B C D E F G H J K L N P Q R S W STYLE 3: PIN 1. 2. 3. 4. CASE: RF INPUT VBIAS VDD RF OUTPUT GROUND CASE 301AP - 02 ISSUE E Note: VDD (Pin 3) should always be applied before VBIAS (Pin 2). MHPA21010N RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale.s Environmental Products program, go to http://www.freescale.com/epp. Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp. MHPA21010N 8Rev. 6, 5/2006 Document Number: MHPA21010N RF Device Data Freescale Semiconductor |
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